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Freescale Semiconductor Technical Data
Document Number: MRF8S21200H Rev. 1, 11/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 48 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 17.8 18.1 18.1 hD (%) 32.6 32.6 32.9 Output PAR (dB) 6.4 6.3 6.2 ACPR (dBc) - 37.7 - 37.1 - 36.2
MRF8S21200HR6 MRF8S21200HSR6
2110 - 2170 MHz, 48 W AVG., 28 V W - CDMA, LTE LATERAL N - CHANNEL RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 250 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) CW Operation @ TA = 25C Derate above 25C Symbol VDSS VGS VDD Tstg TC TJ CW Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 200 1.6 Unit Vdc Vdc Vdc C C C W W/C
CASE 375D - 05, STYLE 1 NI - 1230 MRF8S21200HR6
CASE 375E - 04, STYLE 1 NI - 1230S MRF8S21200HSR6
RFin/VGS
3
1 RFout/VDS
RFin/VGS
4
2 RFout/VDS
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 76C, 48 W CW, 28 Vdc, IDQ = 1400 mA Case Temperature 81C, 200 W CW, 28 Vdc, IDQ = 1400 mA Symbol RJC Value (2,3) 0.31 0.27 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MRF8S21200HR6 MRF8S21200HSR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1400 mA, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) VGS(th) VGS(Q) VDS(on) 1.2 2 0.1 2 2.7 0.17 2.7 3.5 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 48 W Avg., f = 2140 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 16.5 30.0 5.7 -- -- 18.1 32.6 6.3 - 37.1 - 15 19.5 -- -- - 35.0 -7 dB % dB dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 48 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 2110 MHz 2140 MHz 2170 MHz 1. Part internally matched both on input and output. (continued) Gps (dB) 17.8 18.1 18.1 hD (%) 32.6 32.6 32.9 Output PAR (dB) 6.4 6.3 6.2 ACPR (dBc) - 37.7 - 37.1 - 36.2 IRL (dB) - 15 - 15 - 13
MRF8S21200HR6 MRF8S21200HSR6 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic IMD Symmetry @ 140 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 48 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol IMDsym Min Typ Max Unit MHz -- 8 -- Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110 - 2170 MHz Bandwidth
VBWres GF G P1dB
-- -- -- --
35 0.4 0.02 0.02
-- -- -- --
MHz dB dB/C dBm/C
MRF8S21200HR6 MRF8S21200HSR6 RF Device Data Freescale Semiconductor 3
C12 C6 C4
C14
C15
R4
R2
C18
R1
C1*
C2
C3 R3
C8
C9
C10
C11*
R5 C17
C13 C16 C7 MRF8S21200H Rev. 2 C5
*C1 and C11 are mounted vertically.
Figure 2. MRF8S21200HR6(HSR6) Test Circuit Component Layout Table 5. MRF8S21200HR6(HSR6) Test Circuit Component Designations and Values
Part C1, C4, C5, C11, C12, C13 C2 C3 C6, C7, C14, C15, C16, C17 C8 C9 C10 C18 R1 R2, R3 R4, R5 PCB Description 8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 0.6 pF Chip Capacitor 10 F, 50 V Chip Capacitors 0.5 pF Chip Capacitor 0.8 pF Chip Capacitor 0.3 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitor 22 , 1/4 W Chip Resistor 12 , 1/4 W Chip Resistors 0 , 3 A Chip Resistors 0.030, r = 3.5 Part Number ATC100B8R2CT500XT ATC100B0R2BT500XT ATC100B0R6BT500XT C5750X5R1H106MT ATC100B0R5BT500XT ATC100B0R8BT500XT ATC100B0R3BT500XT MCGPR63V477M13X26 - RH CRCW120622R0FKEA CRCW120612R0FKEA CRCW12060000Z0EA RO4350B Manufacturer ATC ATC ATC TDK ATC ATC ATC Multicomp Vishay Vishay Vishay Rogers
MRF8S21200HR6 MRF8S21200HSR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 48 W (Avg.), IDQ = 1400 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth D Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Gps IRL PARC D, DRAIN EFFICIENCY (%) 19 18.8 18.6 Gps, POWER GAIN (dB) 18.4 18.2 18 17.8 17.6 17.4 17.2 ACPR 17 2060 2080 34 33 32 31 30 -34 ACPR (dBc) -34.8 -35.6 -36.4 -37.2 2100 2120 2140 2160 2180 2200 -38 2220 -8 -9.8 -11.6 -13.4 -15.2 -17
IRL, INPUT RETURN LOSS (dB)
0 PARC (dB) -0.5 -1 -1.5 -2 -2.5
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 48 Watts Avg.
-10 VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1400 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM3-U -30 IM3-L -40 IM5-U IM5-L -50 IM7-L IM7-U -60 1 10 TWO-TONE SPACING (MHz) 100
IMD, INTERMODULATION DISTORTION (dBc)
-20
Figure 4. Intermodulation Distortion Products versus Two - Tone Spacing
19 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 18.5 Gps, POWER GAIN (dB) 18 17.5 17 16.5 16 1 -20 -25 -30 -35 -40 -45 -50 ACPR (dBc)
ACPR 38 33 28 23
-1 -2 -1 dB = 42 W -3 -2 dB = 57 W -4 -3 dB = 76 W -5 20 PARC 40 60 80 100 Gps
18 120
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
MRF8S21200HR6 MRF8S21200HSR6 RF Device Data Freescale Semiconductor 5
D, DRAIN EFFICIENCY (%)
VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input 0 Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
48 D 43
TYPICAL CHARACTERISTICS
22 20 Gps, POWER GAIN (dB) 18 16 14 12 10 1 10 Pout, OUTPUT POWER (WATTS) AVG. f = 2110 MHz 2140 MHz 2170 MHz 2140 MHz 2110 MHz 2110 MHz 2140 MHz 2170 MHz 100 2170 MHz ACPR 30 Gps 20 10 0 300 VDD = 28 Vdc, IDQ = 1400 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF D 60 50 D, DRAIN EFFICIENCY (%) 40 0 -10 -20 -30 -40 -50 -60 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 3.6
Figure 6. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
21 18 15 GAIN (dB) 12 IRL 9 6 3 1750 VDD = 28 Vdc Pin = 0 dBm IDQ = 1400 mA 1850 1950 2050 2150 2250 2350 2450 -12 -15 -18 2550 Gain 0 -3 -6 -9 IRL (dB) 3.84 MHz Channel BW
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW
PEAK-TO-AVERAGE (dB)
Figure 8. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal
Figure 9. Single - Carrier W - CDMA Spectrum MRF8S21200HR6 MRF8S21200HSR6 6 RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 48 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource W 3.64 - j4.51 3.65 - j4.50 3.64 - j4.53 3.56 - j4.47 3.58 - j4.44 3.58 - j4.44 3.57 - j4.44 3.56 - j4.45 3.54 - j4.64 Zload W 1.42 - j2.27 1.41 - j2.21 1.40 - j2.15 1.40 - j2.09 1.39 - j2.03 1.38 - j1.97 1.38 - j1.91 1.38 - j1.86 1.37 - j1.80
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF8S21200HR6 MRF8S21200HSR6 RF Device Data Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 61 60 Pout, OUTPUT POWER (dBm) 59 58 57 56 55 54 53 52 51 50 30 31 32 33 34 35 36 37 38 39 40 41 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 2110 2140 2170 P1dB Watts 231 230 229 dBm 53.6 53.6 53.6 276 279 277 P3dB Watts dBm 54.4 54.5 54.4 f = 2110 MHz f = 2140 MHz f = 2110 MHz f = 2140 MHz f = 2170 MHz Actual Ideal
f = 2170 MHz
Test Impedances per Compression Level f (MHz) 2110 2140 2170 P1dB P1dB P1dB Zsource 2.14 - j5.14 3.28 - j6.37 5.59 - j7.20 Zload 0.77 - j1.44 0.75 - j1.52 0.67 - j1.41
Figure 11. Pulsed CW Output Power versus Input Power @ 28 V
MRF8S21200HR6 MRF8S21200HSR6 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S21200HR6 MRF8S21200HSR6 RF Device Data Freescale Semiconductor 9
MRF8S21200HR6 MRF8S21200HSR6 10 RF Device Data Freescale Semiconductor
MRF8S21200HR6 MRF8S21200HSR6 RF Device Data Freescale Semiconductor 11
MRF8S21200HR6 MRF8S21200HSR6 12 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Oct. 2009 Nov. 2009 * Initial Release of Data Sheet * Removed Typical Pout @ 1 dB Compression Point bullet from p. 1, and P1dB from the Typical Performance table, p. 3. P1dB was artificially low due to fixture tuning tradeoffs, i.e., fixture was tuned for back - off linearity versus optimum P1dB. Description
MRF8S21200HR6 MRF8S21200HSR6 RF Device Data Freescale Semiconductor 13
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MRF8S21200HR6 MRF8S21200HSR6
Rev. 14 1, 11/2009 Document Number: MRF8S21200H
RF Device Data Freescale Semiconductor

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